An Improved Method to Estimate Turn-on Switching Loss of 650V GaN HEMTs in Hard-switching Topology

As new-generation semiconductors, gallium nitride high electron mobility transistors (GaN HEMTs) are featured as high efficiency and high power density being utilized in various power conversion application. Compared with conventional silicon devices, GaN HEMTs have faster switching speed, but lower losses which include conduction loss and switching losses. Due to the high switching frequency and compact size of GaN HEMTs, it is of importance to assess their switching losses as precisely as possible. In this paper, an improved method to estimate the turn-on switching loss of GaN HEMTs in hard-switching topology is proposed and verified. The calculation results are compared with the double pulse test simulation results from LTspice and the experimental results.