Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy

被引：49

作者：

Feltin, E ^{[1
]}

Dalmasso, S ^{[1
]}

de Mierry, P ^{[1
]}

Beaumont, B ^{[1
]}

Lahrèche, H ^{[1
]}

Bouillé, A ^{[1
]}

Haas, H ^{[1
]}

Leroux, M ^{[1
]}

Gibart, P ^{[1
]}

机构：

[1] CNRS, CRHEA, F-06560 Valbonne, France

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 7B期

关键词：

Si (111); InGaN; LED; electroluminescence; MOVPE;

D O I：

10.1143/JJAP.40.L738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the growth and characterization of green InGaN light-emitting diodes (LEDs) grown on Si (111) substrates us in metalorganic vapor phase epitaxy. A single InGaN quantum well active layer has been used. The optical qualities of InGaN on Si(111) and the p-doping efficiency of GaN are discussed. The turn-on voltage of the LED is 6.8 V and the operating voltage is 10.7 V at 20 mA. Electroluminescence of the LEDs starts at a forward bias of 3.5 V. The electroluminescence peaks at 508 nm, with a full-width at half maximum of 52 nm. An optical output power of 6 muW (in similar to 8 pi /5 sr) was achieved for an applied current of 20 mA.

引用

页码：L738 / L740

页数：3

共 16 条

[11] Indium incorporation above 800 °C during metalorganic vapor phase epitaxy of InGaN [J].