Engineering and Localization of Quantum Emitters in Large Hexagonal Boron Nitride Layers

被引：166

作者：

Choi, Sumin ^{[1
]}

Toan Trong Tran ^{[1
]}

Elbadawi, Christopher ^{[1
]}

Lobo, Charlene ^{[1
]}

Wang, Xuewen ^{[2
]}

Juodkazis, Saulius ^{[2
]}

Seniutinas, Gediminas ^{[1
]}

Toth, Milos ^{[1
]}

Aharonovich, Igor ^{[1
]}

机构：

[1] Univ Technol Sydney, Sch Math & Phys Sci, Ultimo, NSW 2007, Australia

[2] Swinburne Univ Technol, Ctr Microphoton, Hawthorn, Vic 3122, Australia

来源：

ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 43期

基金：

澳大利亚研究理事会;

关键词：

hexagonal boron nitride; quantum emitters; nanophotonics; 2D materials; ion implantation; defect engineering; luminescence; TRANSITION-METAL CARBIDES; SINGLE-PHOTON EMISSION; PHOTOLUMINESCENCE; SEMICONDUCTOR; NANOTUBES; DEFECTS; NANORIBBONS; POLARITONS; MONOLAYERS; WS2;

D O I：

10.1021/acsami.6b09875

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hexagonal boron nitride is a wide-band-gap van der Waals material that has recently emerged as a promising platform for quantum photonics experiments. In this work, we study the formation and localization of narrowband quantum emitters in large flakes (up to tens of micrometers wide) of hexagonal boron nitride. The emitters can be activated in as-grown hexagonal boron nitride by electron irradiation or high-temperature annealing, and the emitter formation probability can be increased by ion implantation or focused laser irradiation of the as-grown material. Interestingly, we show that the emitters are always localized at the edges of the flakes, unlike most luminescent point defects in three-dimensional materials. Our results constitute an important step on the roadmap of deploying hexagonal boron nitride in nanophotonics applications.

引用

页码：29642 / 29648

页数：7

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