An integrated SiGe dual-band low noise amplifier for bluetooth, HiperLAN and wireless LAN applications

被引：0
|
作者：
Mou, SX [1 ]
Ma, JG [1 ]
Yeo, KS [1 ]
Do, MA [1 ]
机构：
[1] Nanyang Technol Univ, Ctr Integrated Circuits & Syst, Singapore 639798, Singapore
来源：
33RD EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS | 2003年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A bandpass low noise amplifier (LNA), which can simultaneously operate at two different frequency bands - 2.35GHz-2.6GHz and 5GHz-6GHz, is presented in this paper. The proposed dual-band LNA can be used for the Bluetooth, HiperLAN and Wireless LAN (IEEE 802.11a) communication applications, and is designed based on IBM 0.25 mum SiGe BiCMOS technology, which has better performance comparing with silicon technology, while lower cost and better integration feasibility comparing with GaAs technology.
引用
收藏
页码：5 / 8
页数：4
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