Three dimensional dielectrophoretic assembly of single-walled carbon nanotubes for integrated circuit interconnects

被引:0
|
作者
Khanduja, Nishant [1 ]
Selvarasah, Selvapraba [1 ]
Makaram, Prashanth [2 ]
Chen, Chia-Ling [1 ]
Busnaina, Ahmed [2 ]
Dokmeci, Mehmet R. [1 ]
机构
[1] Northeastern Univ, ECE Dept, NSF NSEC High Rate Nanomfg, Boston, MA 02115 USA
[2] Northeastern Univ, MIE Dept, NSF NSEC High Rate Nanomfg, Boston, MA 02115 USA
来源
PROCEEDINGS OF THE IEEE TWENTIETH ANNUAL INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, VOLS 1 AND 2 | 2007年
基金
美国国家科学基金会;
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
in this paper, we report a novel technological approach for three dimensional (3D) assembly of single-walled carbon nanotubes (SWNTs) using dielectrophoresis (DEP). The two terminal resistance of the assembled SWNTs is similar to 545 Ohms. Encapsulation of the 3D structure with a thin layer of parylene-C protects it from the environment and keeps it intact. This directed assembly procedure is versatile, inexpensive, and achieved at room temperature. By utilizing a self-aligned three mask process, we demonstrate a 3D assembly/encapsulation method utilizing conductive SWNTs as the metallization material, parylene-C as the inter-level dielectric and the encapsulation layer. This technology is also applicable for vertical assembly of other conductive nanostructures and will enable 3D research in nanotechnology.
引用
收藏
页码:172 / +
页数:2
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