Ferroelectric field effect in SrCuO2 and SrRuO3 films

被引：4

作者：

Ahn, CH

Antognazza, L

Tybell, T

Char, K

Decroux, M

Hammond, RH

Geballe, TH

Beasley, MR

Fischer, O

Triscone, JM

机构：

[1] STANFORD UNIV,DEPT APPL PHYS,STANFORD,CA 94305

[2] CONDUCTUS INC,SUNNYVALE,CA 94086

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 1996年 / 105卷 / 5-6期

关键词：

D O I：

10.1007/BF00753915

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on ferroelectric field effect experiments on Pb(Zr0.52Ti0.48)O-3/SrCuO2 and Pb(Zr0.52Ti0.48)O-3/SrRuO3 epitaxial heterostructures with an emphasis on the material characterization. Upon reversing the polarization of the Pb(Zr0.52Ti0.48)O-3 ferroelectric layer we measured a nonvolatile change in the resistivity of ultrathin layers of SrCuO2 and SrRuO3. In thin SrRuO3 films (30 Angstrom) up to a 9% resistivity change has been observed at room temperature.

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页码：1517 / 1522

页数：6

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