High efficiency graded bandgap thin-film polycrystalline Cu(In,Ga)Se-2-based solar cells

被引：106

作者：

Contreras, MA

Tuttle, J

Gabor, A

Tennant, A

Ramanathan, K

Asher, S

Franz, A

Keane, J

Wang, L

Noufi, R

机构：

[1] National Renewable Energy Laboratory, Golden

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1996年 / 41-2卷

关键词：

D O I：

10.1016/0927-0248(95)00145-X

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Our effort towards the attainment of high performance devices has yielded several devices with total-area conversion efficiencies above 16%, the highest measuring 16.8% under standard reporting conditions (ASTM E892-87, Global 1000 W/m(2)). The first attempts to translate this development to larger areas resulted in an efficiency of 12.5% for a 16.8-cm(2) monolithically interconnected submodule test structure, and 15.3% for a 4.85-cm(2) single cell. Achievement of a 17.2% device efficiency fabricated for operation under concentration (22-sun) is also reported. All high efficiency devices reported here were made from compositional graded absorbers. The compositional Ga/(In + Ga) variations result in absorbers with graded bandgaps and graded carrier concentrations. Two types of bandgap gradings have been fabricated and characterized. We discuss their background for PV action enhancement along with the experimental concepts to grow such structures via coevaporation methods.

引用

页码：231 / 246

页数：16

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