Microstructure and high-temperature strength of silicon carbide with 2000 ppm yttria

被引：37

作者：

Kim, Young-Wook ^{[1
]}

Jang, Seung Hoon ^{[1
]}

Nishimura, Toshiyuki ^{[2
]}

Choi, Si-Young ^{[3
]}

Kim, Sung-Dae ^{[3
]}

机构：

[1] Univ Seoul, Dept Mat Sci & Engn, Funct Ceram Lab, Seoul 02504, South Korea

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[3] Korea Inst Mat Sci, Dept Mat Modelling & Characterizat, Chang Won 51508, South Korea

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2017年 / 37卷 / 15期

关键词：

Silicon carbide; Mechanical properties; High temperature strength; Microstructure; Yttria; SIC-CERAMICS; MECHANICAL-PROPERTIES; ALUMINUM NITRIDE; ELECTROCHEMICAL CORROSION; ELECTRICAL-PROPERTIES; PHASE; TOUGHNESS; ALN;

D O I：

10.1016/j.jeurceramsoc.2017.07.002

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A dense silicon carbide (SiC) ceramic with a very high flexural strength at 2000 degrees C (981 +/- 128 MPa) was obtained by conventional hot-pressing with extremely low additive content (2000 ppm Y2O3). Observations using high-resolution transmission electron microscopy (HRTEM) showed that (1) homophase (SiC/SiC) boundaries were clean without an intergranular glassy phase and (2) junction pockets consisted of nanocrystalline Y-containing phase embedded in an amorphous Y-Si-O-C-N phase. The excellent strength at 2000 degrees C was attributed to the clean SiC/SiC boundary and the strengthening effect of plastic deformation. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：4449 / 4455

页数：7

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