Ultra-high sensitivity intra-grain poly-diamond piezoresistors

被引：48
作者：
Sahli, S
Aslam, DM [1 ]
机构：
[1] Michigan State Univ, Dept Elect Engn, E Lansing, MI 48823 USA
[2] Michigan State Univ, Ctr Fundamental Mat Res, E Lansing, MI 48823 USA
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 1998年 / 71卷 / 03期
关键词：
diamond films; chemical vapor deposition; piezoresistive sensors; intra-grain sensors; high sensitivity sensors;
D O I：
10.1016/S0924-4247(98)00181-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Chemical vapor deposited (CVD) polycrystalline diamond is inexpensive and can become a commercially viable piezoresistive sensor material if its typical gauge factor (GF) exceeds that of crystalline Si and SE. In this paper, a study of GF of B-doped polycrystalline diamond film leads to an intra-grain GF above 4000, which is comparable to GF of single crystal p-type diamond. This result, reported for the first time, shows that large-grain (50-80 mu m) CVD diamond can be used to build inexpensive ultra-high sensitivity piezoresistive sensors. (C) 1998 Elsevier Science S.A. All rights reserved.
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收藏
页码：193 / 197
页数：5
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