Sulfur-induced exciton localization in Te-rich ZnSTe alloy

被引：1
|
作者：
Yang, XD
Xu, ZY
Sun, Z
Ji, Y
Sun, BQ
Sou, IK
Ge, WK
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 16期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.1906303
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Exciton localization in Te-rich ZnSTe epilayers has been studied by photoluminescence (PL) and time-resolved PL. The sulfur-related exciton emission is found to dominate the radiative recombination at low temperature and is shifted to the low energy with the increase of S concentration. By measuring the PL dependence on temperature and by analyzing the PL decay process, we have clarified the localization nature of the sulfur-related exciton emission. Furthermore, the difference of the localization effect in Te- and S-rich ZnSTe is also compared and discussed. (c) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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