Laser-driven acceleration of protons from hydrogenated annealed silicon targets

被引：18

作者：

Picciotto, A. ^{[1
]}

Margarone, D. ^{[2
]}

Krasa, J. ^{[2
]}

Velyhan, A. ^{[2
]}

Serra, E. ^{[4
,5
]}

Bellutti, P. ^{[1
]}

Scarduelli, G. ^{[4
,5
]}

Calliari, L. ^{[4
,5
]}

Krousky, E. ^{[2
]}

Rus, B. ^{[2
]}

Dapor, M. ^{[3
,4
,5
]}

机构：

[1] Fdn Bruno Kessler CMM, Microtechnol Lab, I-38050 Povo, Trento, Italy

[2] ASCR, Inst Phys, VVI, Prague, Czech Republic

[3] Univ Trent, Dept Mat Engn & Ind Technol, I-38123 Trento, Italy

[4] FBK CMM, Interdisciplinary Lab Computat Sci LISC, I-38050 Povo, Trento, Italy

[5] Univ Trent, I-38050 Povo, Trento, Italy

来源：

EPL | 2010年 / 92卷 / 03期

关键词：

AMORPHOUS-SILICON; PLASMA; SPECTRA; ENERGY; IONS; TEMPERATURE;

D O I：

10.1209/0295-5075/92/34008

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper provides the first demonstration that an hydrogenated annealed crystalline silicon may be used as a source of protons in laser-driven acceleration experiments. We analyze and compare the proton production from two silicon targets excited by a sub-nanosecond laser. One target (treated) was hydrogenated and annealed, while the other (untreated) did not undergo these procedures. The experimental results show that for the treated target, the number of generated protons is similar to 1.4x10(15) sr(-1) while for the other it is similar to 3.6x10(13) sr(-1). Their maximum energy is about 2MeV with a laser intensity three order of magnitude lower than in previous experiments. We obtain an increase of 80% in the proton kinetic energy and of 200% in the proton current as well as a large amount of Si(q+) ions (1 <= q <= 14) with respect to the untreated target. A deconvolution procedure based on a Boltzmann-like distribution is applied for the analysis of time-of-flight (TOF) spectra of proton and silicon ion beams. Copyright (C) EPLA, 2010

引用

页数：5

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