Origins of a damage-induced green photoluminescence band in fused silica revealed by time-resolved photoluminescence spectroscopy

被引：22
作者：
Zhou, Jiangning [1 ,2 ]
Li, Bincheng [1 ,3 ]
机构：
[1] Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China
[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
[3] Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China
来源：
OPTICAL MATERIALS EXPRESS | 2017年 / 7卷 / 08期
关键词：
POROUS SILICON; LASER IRRADIATION; POINT-DEFECTS; GLASS; SIO2; LUMINESCENCE; GENERATION; DIOXIDE; NANOPARTICLES; SURFACE;
D O I：
10.1364/OME.7.002888
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
With combined lifetime and intensity spectra in time-resolved photoluminescence (PL) spectroscopy, the origins of a green PL band consisting of a 2.39eV-band with lifetime similar to 10 mu s and a 2.25eV-band with lifetime similar to 50 mu s, of high-purity fused silica under ArF excimer laser (6.4eV) excitation were revealed. The 2.39eV PL defects from the surface were annealed due to the deoxidation of the dioxasilyrane group (= SiO2). The 2.25eV PL defects from bulk showed a UV induced growth. Mechanical and laser damage induced growth of the 2.25eV PL band confirmed that it was due to physical disorder from bending of Si-O-Si bonds. Theoretical calculations further assigned the 2.25eV PL band to silanone groups (= Si = O), which can be created by relaxation process of strained Si-O bonds in SiO2 network. (C) 2017 Optical Society of America
引用
收藏
页码：2888 / 2898
页数：11
相关论文
共 41 条
[31]   Photoluminescence properties of sol-gel derived SiO2 layers doped with porous silicon [J].
Svrcek, V ;
Pelant, I ;
Rehspringer, JL ;
Gilliot, P ;
Ohlmann, D ;
Crégut, O ;
Hönerlage, B ;
Chvojka, T ;
Valenta, J ;
Dian, J .
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2002, 19 (1-2) :233-236
[32]   Luminescence of dense, octahedral structured crystalline silicon dioxide (stishovite) [J].
Trukhin, A. N. ;
Smits, K. ;
Sharakosky, A. ;
Chikvaidze, G. ;
Dyuzheva, T. I. ;
Lityagina, L. M. .
JOURNAL OF LUMINESCENCE, 2011, 131 (11) :2273-2278
[33]   Luminescence of localized states in silicon dioxide glass. A short review [J].
Trukhin, A. N. .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2011, 357 (8-9) :1931-1940
[34]   Bright Visible Luminescence in Silica Nanoparticles [J].
Vaccaro, Lavinia ;
Morana, Adriana ;
Radzig, Viktor ;
Cannas, Marco .
JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (40) :19476-19481
[35]   EUV LITHOGRAPHY Lithography gets extreme [J].
Wagner, Christian ;
Harned, Noreen .
NATURE PHOTONICS, 2010, 4 (01) :24-26
[36]   Enhanced plasticity of silica glass at high pressure [J].
Wakabayashi, Daisuke ;
Funamori, Nobumasa ;
Sato, Tomoko .
PHYSICAL REVIEW B, 2015, 91 (01)
[37]   Phase separation of thin SiO layers in amorphous SiO/SiO2 superlattices during annealing [J].
Yi, LX ;
Heitmann, J ;
Scholz, R ;
Zacharias, M .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (39) :S2887-S2895
[38]   Brittle to Ductile Transition in Densified Silica Glass [J].
Yuan, Fenglin ;
Huang, Liping .
SCIENTIFIC REPORTS, 2014, 4
[39]   Role of Si=O in the photoluminescence of porous silicon [J].
Zhou, FL ;
Head, JD .
JOURNAL OF PHYSICAL CHEMISTRY B, 2000, 104 (43) :9981-9986
[40]   The effect of local environment on photoluminescence: A time-dependent density functional theory study of silanone groups on the surface of silica nanostructures [J].
Zwijnenburg, M. A. ;
Sokol, A. A. ;
Sousa, C. ;
Bromley, S. T. .
JOURNAL OF CHEMICAL PHYSICS, 2009, 131 (03)
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