Origins of a damage-induced green photoluminescence band in fused silica revealed by time-resolved photoluminescence spectroscopy

被引：22

作者：

Zhou, Jiangning ^{[1
,2
]}

Li, Bincheng ^{[1
,3
]}

机构：

[1] Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

[3] Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China

来源：

OPTICAL MATERIALS EXPRESS | 2017年 / 7卷 / 08期

关键词：

POROUS SILICON; LASER IRRADIATION; POINT-DEFECTS; GLASS; SIO2; LUMINESCENCE; GENERATION; DIOXIDE; NANOPARTICLES; SURFACE;

D O I：

10.1364/OME.7.002888

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

With combined lifetime and intensity spectra in time-resolved photoluminescence (PL) spectroscopy, the origins of a green PL band consisting of a 2.39eV-band with lifetime similar to 10 mu s and a 2.25eV-band with lifetime similar to 50 mu s, of high-purity fused silica under ArF excimer laser (6.4eV) excitation were revealed. The 2.39eV PL defects from the surface were annealed due to the deoxidation of the dioxasilyrane group (= SiO2). The 2.25eV PL defects from bulk showed a UV induced growth. Mechanical and laser damage induced growth of the 2.25eV PL band confirmed that it was due to physical disorder from bending of Si-O-Si bonds. Theoretical calculations further assigned the 2.25eV PL band to silanone groups (= Si = O), which can be created by relaxation process of strained Si-O bonds in SiO2 network. (C) 2017 Optical Society of America

引用

页码：2888 / 2898

页数：11

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