In-situ TEM study of domain switching in GaN thin films

被引:2
作者
Wang, Baoming [1 ]
Wang, Tun [1 ,2 ]
Haque, Aman [1 ]
Snure, Michael [3 ]
Heller, Eric [3 ]
Glavin, Nicholas [3 ]
机构
[1] Penn State Univ, Dept Mech & Nucl Engn, University Pk, PA 16802 USA
[2] Xiamen Univ, Pen Tung Sah Inst Micronano Sci & Technol, Xiamen 361005, Peoples R China
[3] Air Force Res Lab, 2941 Hobson Way, Wright Patterson AFB, OH 45433 USA
基金
美国国家科学基金会;
关键词
ALGAN/GAN HETEROSTRUCTURES; OPTICAL-PROPERTIES; BAND GAP; POLARITY; BN;
D O I
10.1063/1.5002690
中图分类号
O59 [应用物理学];
学科分类号
摘要
Microstructural response of gallium nitride (GaN) films, grown by metal-organic chemical vapor deposition, was studied as a function of applied electrical field. In-situ transmission electron microscopy showed sudden change in the electron diffraction pattern reflecting domain switching at around 20V bias, applied perpendicular to the polarization direction. No such switching was observed for thicker films or for the field applied along the polarization direction. This anomalous behavior is explained by the nanoscale size effects on the piezoelectric coefficients of GaN, which can be 2-3 times larger than the bulk value. As a result, a large amount of internal energy can be imparted in 100 nm thick films to induce domain switching at relatively lower voltages to induce such events at the bulk scale.
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页数:5
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