Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices

被引：77

作者：

Matveyev, Yu. ^{[1
,2
]}

Egorov, K. ^{[1
]}

Markeev, A. ^{[1
]}

Zenkevich, A. ^{[1
,2
]}

机构：

[1] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia

[2] NRNU Moscow Engn Phys Inst, Moscow 115409, Russia

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 04期

基金：

俄罗斯科学基金会;

关键词：

ELECTRONIC SYNAPSE; OXIDE; PLASTICITY; MEMORY;

D O I：

10.1063/1.4905792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recently proposed novel neural network hardware designs imply the use of memristors as electronic synapses in 3D cross-bar architecture. Atomic layer deposition (ALD) is the most feasible technique to fabricate such arrays. In this work, we present the results of the detailed investigation of the gradual resistive switching (memristive) effect in nanometer thick fully ALD grown TiN/HfO2/TiN stacks. The modelling of the I-V curves confirms interface limited trap-assisted-tunneling mechanism along the oxygen vacancies in HfO2 in all conduction states. The resistivity of the stack is found to critically depend upon the distance from the interface to the first trap in HfO2. The memristive properties of ALD grown TiN/HfO2/TiN devices are correlated with the demonstrated neuromorphic functionalities, such as long-term potentiation/depression and spike-timing dependent plasticity, thus indicating their potential as electronic synapses in neuromorphic hardware. (C) 2015 AIP Publishing LLC.

引用

页数：7

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