Controlling the thermoelectric behaviors of biased silicene via the magnetic field: Tight binding model

An accurate third nearest neighbor tight-binding model with overlap parameters is employed to compute the electronic and thermo-electrical properties of monolayer Silicene in the presence of bias voltage and magnetic field. The unbiased Silicene has zero band gap and in the presence of bias voltage, it becomes a semiconductor with a direct band gap at the K point. Magnetic field splits band structure with the linear dispersion in the vicinity of the K point and the band gap of biased Silicene decreases and becomes zero with the magnetic field. The first optical peak shows a blue shift by reducing the peak intensity with the bias voltage. In the presence of bias voltage and magnetic field, the thermoelectric properties increase to their maximum value with temperature increasing because of the increase in the thermal excitation of charge carriers. In a higher temperature range, the thermal properties show continuously decreasing due to the increased scattering intensity of the charge carriers which leads to decrease in the carrier mobility. The thermal properties of the biased Silicene are smaller than that unbiased Silicene because the band gap is opened and enlarged in the presence of bias voltage. The thermal functions of Silicene increase with the magnetic field increases due to the band gap decreasing and they are significantly larger than that of biased and unbiased Silicene.