Electric properties of nanoscale contacts on Si(111) surfaces

被引：20

作者：

Hasunuma, R ^{[1
]}

Komeda, T

Tokumoto, H

机构：

[1] Joint Res Ctr Atom Technol, Angstrom Technol Partnership, Tsukuba, Ibaraki 305, Japan

[2] Natl Inst Adv Interdisciplinary Res, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 305, Japan

来源：

APPLIED SURFACE SCIENCE | 1998年 / 130卷

关键词：

STM; indentation; point contact; Si(111); Si wire; electric properties;

D O I：

10.1016/S0169-4332(98)00030-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated the electric properties of nanoscale contacts on Si(111)-7 X 7 surfaces with a scanning tunneling microscope (STM). The contacts between a W STM tip and Si substrates exhibit Schottky-type rectification, whose properties are obviously different from the conventional plane diodes. The current variation during tip retraction from the contact region indicates the influence of Si atoms between the tip and substrates, as well as the contact size effects, which result from the Si atom removal with the present experimental technique. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：84 / 89

页数：6

共 17 条

[1] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES
ANDREWS, JM
PHILLIPS, JC
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (01) : 56 - 59
[2] [Anonymous], PHYS SEMICONDUCTOR D
[3] SCANNING TUNNELING MICROSCOPE TIP SAMPLE INTERACTIONS - ATOMIC MODIFICATION OF SI AND NANOMETER SI SCHOTTKY DIODES
AVOURIS, P
LYO, IW
HASEGAWA, Y
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1993, 11 (04): : 1725 - 1732
[4] Conductance quantization histograms of gold nanowires at 4 K
CostaKramer, JL
Garcia, N
Olin, H
[J]. PHYSICAL REVIEW B, 1997, 55 (19) : 12910 - 12913
[5] Nanoscale indentation on Si(111) surfaces with scanning tunneling microscope
Hasunuma, R
Komeda, T
Tokumoto, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (6B): : 3827 - 3831
[6] Atom manipulation on Si(111)-7x7 surface by contact formation of biased scanning tunneling microscope tip: Surface structures and tip current variation with atom removal
Hasunuma, R
Komeda, T
Mukaida, H
Tokumoto, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1997, 15 (03): : 1482 - 1487
[7] DETERMINATION OF THE FERMI-LEVEL PINNING POSITION AT SI(111) SURFACES
HIMPSEL, FJ
HOLLINGER, G
POLLAK, RA
[J]. PHYSICAL REVIEW B, 1983, 28 (12): : 7014 - 7018
[8] SCANNING-TUNNELING-MICROSCOPY .1. THEORETICAL FRAMEWORK AND COHERENCE EFFECTS
KENKRE, VM
BISCARINI, F
BUSTAMANTE, C
[J]. PHYSICAL REVIEW B, 1995, 51 (16): : 11074 - 11088
[9] Layer-by-layer atomic manipulation on Si(111)-7x7 surface
Komeda, T
Hasunuma, R
Mukaida, H
Tokumoto, H
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (24) : 3482 - 3484
[10] DOPANT REDISTRIBUTION AT SI SURFACES DURING VACUUM ANNEAL
LIEHR, M
RENIER, M
WACHNIK, RA
SCILLA, GS
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) : 4619 - 4625

← 1 2 →