Structure of Ga-stabilized GaAs(001) surfaces at high temperatures

被引：5

作者：

Ohtake, A ^{[1
]}

Tsukamoto, S ^{[1
]}

Pristovsek, M ^{[1
]}

Koguchi, N ^{[1
]}

机构：

[1] NIMS, Tsukuba, Ibaraki 3050047, Japan

来源：

APPLIED SURFACE SCIENCE | 2003年 / 212卷

关键词：

Gallium arsenide; reflection high-energy electron diffraction; surface reconstruction;

D O I：

10.1016/S0169-4332(03)00039-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have studied the atomic structure of the Ga-stabilized GaAs(001)-c(8 x 2) surface using rocking-curve analysis of reflection high-energy electron diffraction (RHEED). The c(8 x 2) surface is stable only at temperatures higher than 600 degreesC, but changes to the (2 x 6)/(3 x 6) structure at lower temperatures. The atomic structure of the c(8 x 2) surface at high temperatures is basically the same as that determined by the analysis at room temperature. We propose that the surface atomic configurations are locally fluctuating at high temperatures. (C) 2003 Elsevier Science B.V. All rights reserved.

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页码：146 / 150

页数：5

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