In situ investigation of self-induced GaN nanowire nucleation on Si

被引：45

作者：

Cheze, C. ^{[1
,2
]}

Geelhaar, L. ^{[1
,2
]}

Trampert, A. ^{[1
]}

Riechert, H. ^{[1
,2
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[2] Qimonda, D-81730 Munich, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 04期

关键词：

gallium compounds; III-V semiconductors; mass spectroscopy; molecular beam epitaxial growth; nanofabrication; nanowires; nitridation; nucleation; reflection high energy electron diffraction; semiconductor growth; semiconductor quantum wires; transmission electron microscopy; wide band gap semiconductors; BEAM EPITAXIAL-GROWTH; CATALYST-FREE; TEMPERATURE; INTERFACE; LAYERS;

D O I：

10.1063/1.3464956

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The nucleation of GaN nanowires grown by molecular beam epitaxy on bare Si(111) and Si(001) has been investigated in situ by reflection high-energy electron diffraction (RHEED) and line-of-sight quadrupole mass spectrometry. On either substrate, the incorporation rate of Ga increases in two steps to steady-state conditions, and the RHEED transmission pattern of GaN appears only in the second stage. Ex situ transmission electron microscopy on samples from both stages grown on Si(001) revealed that the nanowire nucleation is strongly affected by the simultaneous nitridation of the Si substrate. (C) 2010 American Institute of Physics. [doi:10.1063/1.3464956]

引用

页数：3

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