Passivation of type-II InAs/GaSb double heterostructure

被引：76

作者：

Delaunay, Pierre-Yves ^{[1
]}

Hood, Andrew ^{[1
]}

Nguyen, Binh Minh ^{[1
]}

Hoffman, Darin ^{[1
]}

Wei, Yajun ^{[1
]}

Razeghi, Manijeh ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 09期

关键词：

D O I：

10.1063/1.2776353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Focal plane array fabrication requires a well passivated material that is resistant to aggressive processes. The authors report on the ability of type-II InAs/GaSb superlattice heterodiodes to be more resilient than homojunctions diodes in improving sidewall resistivity through the use of various passivation techniques. The heterostructure consisting of two wide band gap (5 mu m) superlattice contacts and a low band gap active region (11 mu m) exhibits an R(0)A averaging of 13 Omega cm(2). The devices passivated with SiO2, Na2S and SiO2 or polyimide did not degrade compared to the unpassivated sample and the resistivity of the sidewalls increased to 47 k Omega cm. (c) 2007 American Institute of Physics.

引用

页数：3

共 9 条

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