Nonresonant carrier transfer in single InGaAs/GaAs quantum dot molecules

被引：14

作者：

Chang, Wen-Hao ^{[1
]}

Lin, Hsuan ^{[1
]}

Wang, Sheng-Yun ^{[1
]}

Lin, Chia-Hsien ^{[1
]}

Cheng, Shun-Jen ^{[1
]}

Lee, Ming-Chih ^{[1
]}

Chen, Wen-Yen ^{[2
]}

Hsu, Tzu-Min ^{[2
]}

Hsieh, Tung-Po ^{[3
]}

Chyi, Jen-Inn ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

[2] Natl Cent Univ, Dept Phys, Chungli 320, Taiwan

[3] Natl Cent Univ, Dept Elect Engn, Chungli 320, Taiwan

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.77.245314

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a spectroscopic study of single quantum dot molecules (QDMs) formed by two closely stacked In0.5Ga0.5As layers. The exciton fine structures as well as direct and indirect excitonic species associated with QDMs were identified by power dependent and polarization resolved microphotoluminescence measurements. As the temperature was increased, a directional energy transfer between the direct and indirect excitons in single QDMs was observed. A rate-equation model was developed to explain our data. We show that a phonon-assisted nonresonant tunneling of the hole between the two adjacent dots is responsible for such directional energy transfers in QDMs.

引用

页数：5

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