Self-limiting growth of specular InP layer by alternate injection of triethylindium and tertiarybutylphosphine in ultrahigh vacuum

被引：5
|
作者：
Otsuka, N
Nishizawa, J
Kikuchi, H
Oyama, Y
机构：
[1] Telecommun Advancement Org Japan, SENDAI Res Ctr, Sendai, Miyagi 9800868, Japan
[2] Semicond Res Fdn, Semicond Res Inst, Sendai, Miyagi 9800862, Japan
[3] Tohoku Univ, Grad Sch Engn, Dept Mat Sci & Engn, Sendai, Miyagi 9808579, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 1AB期
关键词：
indium phosphide; molecular layer epitaxy; alternate injection; self-limiting growth; triethylindium; tertiary-butylphosphine; surface morphology; decomposition mechanism; ultrahigh vacuum; low-temperature growth;
D O I：
10.1143/JJAP.38.L20
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Alternate injection of triethylindium (TEI) and tertiarybutylphosphine without precracking has been studied to realize low-temperature growth of an InP layer on an (001) InP substrate in ultrahigh vacuum (UHV). Self-limiting growth, in which the growth rate is independent of the injection time and the injection pressure of the sources, was demonstrated at a temperature as low as 320 degrees C. The self-limiting growth with a growth rate of around 0.75 monolayer per cycle and specular surface morphology was achieved. A clean regrown interface is expected by combining with the digital etching achieved at low temperature in UHV. The decomposition mechanism of TEI on InP surface is discussed.
引用
收藏
页码：L20 / L23
页数：4
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