Design and Fabrication of a Fiber-Optic Deep-Etched Silicon Fabry-Perot Temperature Sensor

被引:0
作者
Zarei, Sanaz [1 ]
Mohajerzadeh, Shamsoddin [1 ]
Shahabadi, Mahmoud [2 ]
机构
[1] Univ Tehran, Coll Engn, Sch Elect & Comp Engn, Thin Film Lab, Tehran, Iran
[2] Univ Tehran, Coll Engn, Sch Elect & Comp Engn, Photon Res Lab, Tehran, Iran
来源
2017 2ND IEEE INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS AND PHOTONICS (ICTP) | 2017年
关键词
Anisotropic deep reactive ion etching; Silicon sensor; Fabry-Perot sensor; Integrated Optics; Optical fiber sensors; Temperature sensors;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Design and fabrication of a silicon-based fiber-optic temperature sensor is reported. It is based on a planar Fabry-Perot resonator fabricated on a silicon substrate using highly anisotropic deep reactive ion etching process. Due to the large thermo-optic coefficient and thermal expansion coefficient of silicon, we have typically achieved a sensitivity of 0.5mV/degrees C in our measurements. The paper also includes a summary of our computational method to analyze the propagation of an optical Gaussian beam throughout the Fabry-Perot cavity fabricated in the silicon substrate.
引用
收藏
页码:92 / 96
页数:5
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