Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition

被引:9
|
作者
Kim, Hyun Gi [1 ]
Lee, Jong Geol [1 ]
Kim, Sung Soo [1 ,2 ]
机构
[1] Kyung Hee Univ, Reg Innovat Ctr Components & Mat Informat Display, Yongin 446701, Gyeonggi Do, South Korea
[2] Kyung Hee Univ, Dept Chem Engn, Yongin 446701, Gyeonggi Do, South Korea
关键词
Self-assembled monolayers; Barrier layer; Flexible display; WVTR; Al2O3; Polymeric substrate; LIGHT-EMITTING-DIODES; ORGANIC SOLAR-CELLS; PERFORMANCE; ENHANCEMENT; MULTILAYER; POLYMERS; FILMS; ENCAPSULATION; PASSIVATION;
D O I
10.1016/j.orgel.2017.10.004
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Self-assembled monolayers (SAMs) were applied to seal defects present in Al2O3 barrier layers fabricated on PEN substrate by plasma enhanced atomic layer deposition (PE-ALD), and the effects of the SAM in enhancing the barrier properties were studied. Pinhole defects of Al2O3 single layers were covered by SAM based on a 1-dodecanethiol (DDT) precursor. To investigate the formation of SAMs on Al2O3 layers, contact angle measurements and field-emission-transmission electron microscopy (FE-TEM) were employed. We found that the barrier properties of Al2O3 with SAM were significantly improved compared to those of Al2O3 single layers. The SAM/Al2O3/Ag/PEN multilayer structure showed a superior water vapor transmission rate (WVTR) less than 5.0 x 10(-5) g m(-2) day(-1) at 38 degrees C and 100% relative humidity, demonstrating its applicability for flexible displays. Mechanical stability was investigated using U-folding bending test. The WVTR of the SAM/Al2O3/Ag/PEN multilayer remained less than 5.0 x 10(-5) g m(-2) day(-1) after 25,000-cycles bending test using a 5 mm bending radius.
引用
收藏
页码:98 / 102
页数:5
相关论文
共 50 条
  • [21] Application of Atomic Layer Deposition for the Formation of Nanostructured ITO/Al2O3 Coatings
    Markov, L. K.
    Pavluchenko, A. S.
    Smirnova, I. P.
    Mesh, M., V
    Kolokolov, D. S.
    SEMICONDUCTORS, 2021, 55 (04) : 438 - 445
  • [22] Using a slit doser to probe gas dynamics during Al2O3 atomic layer deposition and to fabricate laterally graded Al2O3 layers
    Seghete, Dragos
    Fabreguette, Francois H.
    George, Steven M.
    THIN SOLID FILMS, 2011, 519 (11) : 3612 - 3618
  • [23] Interface engineering of graphene-silicon Schottky junction solar cells with an Al2O3 interfacial layer grown by atomic layer deposition
    Alnuaimi, Aaesha
    Almansouri, Ibraheem
    Saadat, Irfan
    Nayfeh, Ammar
    RSC ADVANCES, 2018, 8 (19): : 10593 - 10597
  • [24] Interfacial thermal stability and band alignment of Al2O3/HfO2/Al2O3/Si gate stacks grown by atomic layer deposition
    Wei, H. H.
    He, G.
    Chen, X. S.
    Cui, J. B.
    Zhang, M.
    Chen, H. S.
    Sun, Z. Q.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 591 : 240 - 246
  • [25] Atomic Layer Deposition Growth and Characterization of Al2O3 Layers on Cu-Supported CVD Graphene
    Rafailov, Peter
    Mehandzhiev, Vladimir
    Sveshtarov, Peter
    Blagoev, Blagoy
    Terziyska, Penka
    Avramova, Ivalina
    Kirilov, Kiril
    Ranguelov, Bogdan
    Avdeev, Georgi
    Petrov, Stefan
    Lin, Shiuan Huei
    COATINGS, 2024, 14 (06)
  • [26] Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer
    Wang, Xing
    Liu, Hong-Xia
    Fei, Chen-Xi
    Yin, Shu-Ying
    Fan, Xiao-Jiao
    NANOSCALE RESEARCH LETTERS, 2015, 10
  • [27] Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns
    Seo, Seunggi
    Yeo, Byung Chul
    Han, Sang Soo
    Yoon, Chang Mo
    Yang, Joon Young
    Yoon, Jonggeun
    Yoo, Choongkeun
    Kim, Ho-jin
    Lee, Yong-baek
    Lee, Su Jeong
    Myoung, Jae-Min
    Lee, Han-Bo-Ram
    Kim, Woo-Hee
    Oh, Il-Kwon
    Kim, Hyungjun
    ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (47) : 41607 - 41617
  • [28] Epitaxial graphene surface preparation for atomic layer deposition of Al2O3
    Garces, N. Y.
    Wheeler, V. D.
    Hite, J. K.
    Jernigan, G. G.
    Tedesco, J. L.
    Nepal, Neeraj
    Eddy, C. R., Jr.
    Gaskill, D. K.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (12)
  • [29] On the use of (3-trimethoxysilylpropyl) diethylenetriamine self-assembled monolayers as seed layers for the growth of Mn based copper diffusion barrier layers
    Brady-Boyd, A.
    O'Connor, R.
    Armini, S.
    Selvaraju, V.
    Hughes, G.
    Bogan, J.
    APPLIED SURFACE SCIENCE, 2018, 427 : 260 - 266
  • [30] Encapsulation of Cu(InGa)Se2 solar cell with Al2O3 thin-film moisture barrier grown by atomic layer deposition
    Carcia, P. F.
    McLean, R. S.
    Hegedus, Steven
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2010, 94 (12) : 2375 - 2378