A low-power high-quality CMOS image sensor using 1.5 V 4T pinned photodiode and dual-CDS column-parallel single-slope ADC

被引：0

作者：

Xu, Wenjing ^{[1
,2
]}

Chen, Jie ^{[1
]}

Kuang, Zhangqu ^{[3
]}

Zhou, Li ^{[1
]}

Chen, Ming ^{[1
]}

Zhang, Chengbin ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Will Semicond Co Ltd, Shanghai 201210, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2022年 / 43卷 / 08期

基金：

国家重点研发计划;

关键词：

CMOS image sensor; 4T pinned photodiode; single-slope ADC; correlated double sample; counting method;

D O I：

10.1088/1674-4926/43/8/082401

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This paper presents a low-power high-quality CMOS image sensor (CIS) using 1.5 V 4T pinned photodiode (4T-PPD) and dual correlated double sampling (dual-CDS) column-parallel single-slope ADC. A five-finger shaped pixel layer is proposed to solve image lag caused by low-voltage 4T-PPD. Dual-CDS is used to reduce random noise and the nonuniformity between columns. Dual-mode counting method is proposed to improve circuit robustness. A prototype sensor was fabricated using a 0.11 mu m CMOS process. Measurement results show that the lag of the five-finger shaped pixel is reduced by 80% compared with the conventional rectangular pixel, the chip power consumption is only 36 mW, the dynamic range is 67.3 dB, the random noise is only 1.55 e-(rms), and the figure-of-merit is only 1.98 e-.nJ, thus realizing low-power and high-quality imaging.

引用

页数：7

共 14 条

[1] A Low-Power Column-Parallel Gain-Adaptive Single-Slope ADC for CMOS Image Sensors
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