InAs/GaAs Quantum-Dot Light Emitters Monolithically Grown on Si Substrates

被引：0

作者：

Liao, M. ^{[1
]}

Chen, S. ^{[1
]}

Tang, M. ^{[1
]}

Wu, J. ^{[1
]}

Jiang, Q. ^{[1
]}

Seeds, A. ^{[1
]}

Liu, H. ^{[1
]}

机构：

[1] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England

来源：

QUANTUM DOTS AND NANOSTRUCTURES: GROWTH, CHARACTERIZATION, AND MODELING XIII | 2016年 / 9758卷

关键词：

Quantum-dot; silicon photonics; lasers; superluminescent light-emitting diodes; molecular beam epitaxy; LASERS; PERFORMANCE; DIODES;

D O I：

10.1117/12.2213089

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on high quality GaAs-on-Si layers with low threading dislocations obtained by a combination of nucleation layer and dislocation filter layers using the molecular beam epitaxy (MBE) growth method. As a result, we achieved a Si-based electrically pumped 1.3 mu m InAs/GaAs quantum dot (QD) laser that lases up to 111 degrees C with a lasing threshold of 200 A/cm(2), and a single facet output power exceeding 100 mW at room temperature. In addition to Si-based lasers, we also demonstrated the first Si-based InAs/GaAs QD superluminescent light-emitting diode (SLD), from which a close-to-Gaussian emission with a full width at half maximum (FWHM) of similar to 114 nm centered at similar to 1258 nm and maximum output power of 2.6 mW has been achieved.

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页数：8

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