Transport characteristics of type II Weyl semimetal MoTe2 thin films grown by chemical vapor deposition

被引：6

作者：

Bhattarai, Niraj ^{[1
,2
]}

Forbes, Andrew W. ^{[1
,2
]}

Dulal, Rajendra ^{[3
]}

Pegg, Ian ^{[1
,2
]}

Philip, John ^{[1
,2
]}

机构：

[1] Catholic Univ Amer, Dept Phys, Washington, DC 20064 USA

[2] Catholic Univ Amer, Vitreous State Lab, Washington, DC 20064 USA

[3] Chapman Univ, Adv Phys Lab, Inst Quantum Studies, Burtonsville, MD 20806 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 2020年 / 35卷 / 05期

关键词：

thin film; chemical vapor deposition (CVD) (chemical reaction); magnetoresistance (transport); TRANSITION; SPIN;

D O I：

10.1557/jmr.2019.320

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Theoretical calculations and experimental observations show MoTe2 is a type II Weyl semimetal, along with many members of transition metal dichalcogenides family. We have grown highly crystalline large-area MoTe2 thin films on Si/SiO2 substrates by chemical vapor deposition. Very uniform, continuous, and smooth films were obtained as confirmed by scanning electron microscopy and atomic force microscopy analyses. Measurements of the temperature dependence of longitudinal resistivity and current-voltage characteristics at different temperature are discussed. Unsaturated, positive quadratic magnetoresistance of the as-grown thin films has been observed from 10 to 200 K. Hall resistivity measurements confirm the majority charge carriers are hole.

引用

页码：454 / 461

页数：8

共 50 条

[1] Transport characteristics of type II Weyl semimetal MoTe2 thin films grown by chemical vapor deposition
Niraj Bhattarai
Andrew W. Forbes
Rajendra P. Dulal
Ian L. Pegg
John Philip
Journal of Materials Research, 2020, 35 : 454 - 461
[2] Signature of type-II Weyl semimetal phase in MoTe2
Jiang, J.
Liu, Z. K.
Sun, Y.
Yang, H. F.
Rajamathi, C. R.
Qi, Y. P.
Yang, L. X.
Chen, C.
Peng, H.
Hwang, C. -C.
Sun, S. Z.
Mo, S. -K.
Vobornik, I.
Fujii, J.
Parkin, S. S. P.
Felser, C.
Yan, B. H.
Chen, Y. L.
NATURE COMMUNICATIONS, 2017, 8
[3] Signature of type-II Weyl semimetal phase in MoTe2
J. Jiang
Z.K. Liu
Y. Sun
H.F. Yang
C.R. Rajamathi
Y.P. Qi
L.X. Yang
C. Chen
H. Peng
C-C. Hwang
S.Z. Sun
S-K. Mo
I. Vobornik
J. Fujii
S.S.P. Parkin
C. Felser
B.H. Yan
Y.L. Chen
Nature Communications, 8
[4] Quasiparticle scattering in type-II Weyl semimetal MoTe2
Lin, Chun-Liang
Arafune, Ryuichi
Minamitani, Emi
Kawai, Maki
Takagi, Noriaki
JOURNAL OF PHYSICS-CONDENSED MATTER, 2018, 30 (10)
[5] Extremely large magnetoresistance in the type-II Weyl semimetal MoTe2
Chen, F. C.
Lv, H. Y.
Luo, X.
Lu, W. J.
Pei, Q. L.
Lin, G. T.
Han, Y. Y.
Zhu, X. B.
Song, W. H.
Sun, Y. P.
PHYSICAL REVIEW B, 2016, 94 (23)
[6] Topologically nontrivial interband plasmons in type-II Weyl semimetal MoTe2
Jia, Xun
Wang, Maoyuan
Yan, Dayu
Xue, Siwei
Zhang, Shuyuan
Zhou, Jianhui
Shi, Youguo
Zhu, Xuetao
Yao, Yugui
Guo, Jiandong
NEW JOURNAL OF PHYSICS, 2020, 22 (10):
[7] Anisotropic Broadband Photoresponse of Layered Type-II Weyl Semimetal MoTe2
Lai, Jiawei
Liu, Xin
Ma, Junchao
Wang, Qinsheng
Zhang, Kenan
Ren, Xiao
Liu, Yinan
Gu, Qiangqiang
Zhuo, Xiao
Lu, Wei
Wu, Yang
Li, Yuan
Feng, Ji
Zhou, Shuyun
Chen, Jian-Hao
Sun, Dong
ADVANCED MATERIALS, 2018, 30 (22)
[8] Origin of planar Hall effect in type-II Weyl semimetal MoTe2
Liang, D. D.
Wang, Y. J.
Zhen, W. L.
Yang, J.
Weng, S. R.
Yan, X.
Han, Y. Y.
Tong, W.
Zhu, W. K.
Pi, L.
Zhang, C. J.
AIP ADVANCES, 2019, 9 (05)
[9] Strain control of electrical transport properties in Weyl semimetal MoTe2
Yang, Junjie
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2017, 254
[10] Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe2
Deng, Ke
Wan, Guoliang
Deng, Peng
Zhang, Kenan
Ding, Shijie
Wang, Eryin
Yan, Mingzhe
Huang, Huaqing
Zhang, Hongyun
Xu, Zhilin
Denlinger, Jonathan
Fedorov, Alexei
Yang, Haitao
Duan, Wenhui
Yao, Hong
Wu, Yang
Fan, Shoushan
Zhang, Haijun
Chen, Xi
Zhou, Shuyun
NATURE PHYSICS, 2016, 12 (12) : 1105 - +

← 1 2 3 4 5 →