Surface dependence of the nonlinear voltage transfer characteristic in the GaAs-based three-branch nanowire junction (TBJ) is investigated both theoretically and experimentally. A simple model considering the surface-potential-dependent carrier density in the channel reveals a clear relationship between the surface potential and the curvature of the bell-shaped transfer curve. Based on this model, we analyze the behavior of the TBJ with a local conductance modulation by focused light irradiation.