Aharonov-Bohm effect of quantum Hall edge channels

被引：1

作者：

Giesbers, A. J. M. ^{[1
]}

Zeitler, U. ^{[1
]}

Reuter, D. ^{[2
]}

Wieck, A. D. ^{[2
]}

Biasiol, G. ^{[3
]}

Sorba, L. ^{[3
,4
,5
]}

Maan, J. C. ^{[1
]}

机构：

[1] Radboud Univ Nijmegen, High Field Magnet Lab, IMM, NL-6525 ED Nijmegen, Netherlands

[2] Ruhr Univ Bochum, Lehrstuhl Angew Festkorperphysik, D-44780 Bochum, Germany

[3] INFM CNR, Lab Nazl TASC, I-34012 Trieste, Italy

[4] INFM CNR, Natl Res Ctr NEST, I-56126 Pisa, Italy

[5] Scuola Normale Super Pisa, I-56126 Pisa, Italy

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2008年 / 40卷 / 05期

关键词：

quantum ring; quantum Hall effect; Aharonov-Bohm effect;

D O I：

10.1016/j.physe.2007.09.051

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We fabricated quantum rings by means of local anodic oxidation with an atomic force microscope on GaAs/AlGaAs-heterostructures. In low magnetic fields we observe the Aharonov-Bohm effect of I D channels in the ring with a period of 60-80 mT, for different devices. By careful tuning the in-plane gate voltages of the ring we also observe Aharonov-Bohm type of oscillations in the quantum Hall regime, with a surprisingly large period when compared to the low field Aharonov-Bohm oscillations. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：1470 / 1472

页数：3

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