Effect of BCl3 dry etching on InAlN surface properties

被引：9

作者：

Ren, F ^{[1
]}

Lothian, JR ^{[1
]}

Chen, YK ^{[1
]}

MacKenzie, JD ^{[1
]}

Donovan, SM ^{[1
]}

Vartuli, CB ^{[1
]}

Abernathy, CR ^{[1
]}

Lee, JW ^{[1
]}

Pearton, SJ ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1996年 / 143卷 / 09期

关键词：

D O I：

10.1149/1.1837092

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Dry etched InAlN surfaces have been characterized by atomic force microscopy, current-voltage measurements, and Auger electron spectroscopy. Electron cyclotron resonance discharges of BCl3, BCl3/Ar, or BCl3/N-2 all produce nitrogen deficient surfaces that promote leakage current in rectifying metal contacts, with the BCl3/N-2 producing the least disruption of the InAlN surface properties.

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页码：L217 / L219

页数：3

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