Imaging of ferroelectric thin films by X-ray photoemission electron microscopy (XPEEM)

被引:4
作者
Lev, U
Heun, S
Locatelli, A
Zolotoyabko, E
机构
[1] TASC, INFM Lab, I-34012 Trieste, Italy
[2] Technion Israel Inst Technol, Dept Mat Engn, IL-32000 Haifa, Israel
[3] Sincrotrone Trieste, I-34012 Trieste, Italy
关键词
PEEM; ferroelectrics; LEEM; insulators;
D O I
10.1016/j.ultramic.2005.03.008
中图分类号
TH742 [显微镜];
学科分类号
摘要
We performed; X-ray photoemission electron microscopy (XPEEM) measurements at the Nanospectroscopy Beamline of the synchrotron light source ELETTRA, Trieste, Italy, to demonstrate the principal possibility of imaging ferroelectric thin films by low-energy photoelectrons. Due to the insulating properties of ferroelectric films, severe surface charging was the major experimental challenge to overcome. This was achieved by grounding an array of gold inter-digital electrodes (with 5 pm blank intervals between them) deposited on top of the films. The images taken with BaTiO3 films revealed 50-100 nm-sized holes (material discontinuities) on the surface, an observation confirmed by high-resolution scanning electron microscopy (HRSEM). Finer details, e.g. a granular structure, which has been resolved with HRSEM, could not be observed in the XPEEM images. Our measurements indicate that despite some residual charging, a 50 nm lateral resolution can be achieved in XPEEM measurements with ferroelectric films. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:169 / 175
页数:7
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