Post-Treatment of TiO2 Film Enables High-Quality Sb2Se3 Film Deposition for Solar Cell Applications

被引：25

作者：

Wang, Yan ^{[1
]}

Tang, Rongfeng ^{[1
]}

Huang, Lei ^{[1
]}

Qian, Chen ^{[2
]}

Lian, Weitao

Zhu, Changfei ^{[1
]}

Chen, Tao ^{[1
]}

机构：

[1] Univ Sci & Technol China, Sch Chem & Mat Sci, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Peoples R China

[2] Univ New South Wales, Australian Ctr Adv Photovolta, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia

来源：

ACS APPLIED MATERIALS & INTERFACES | 2022年 / 14卷 / 29期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

electron-transporting material; titanium oxide; cadmium chloride; heterojunction; Sb2Se3 solar cell; PERFORMANCE; ENHANCEMENT; EFFICIENT;

D O I：

10.1021/acsami.2c07157

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The TiO2 thin film is considered as a promising wide band gap electron-transporting material. However, due to the strong Ti-O bond, it displays an inert surface characteristic causing difficulty in the adsorption and deposition of metal chalcogenide films such as Sb2Se3 . In this study, a simple CdCl2 post-treatment is conducted to functionalize the TiO2 thin film, enabling the induction of nucleation sites and growth of high quality Sb2Se3 . The interfacial treatment optimizes the conduction band offset of TiO2/Sb2Se3 and leads to an essentially improved TiO2/Sb2Se3 heterojunction. With this convenient interface functionalization, the power conversion efficiency of the Sb2Se3 solar cell is remarkably improved from 2.02 to 6.06%. This study opens up a new avenue for the application of TiO2 as a wide band gap electron-transporting material in antimony chalcogenide solar cells.

引用

页码：33181 / 33190

页数：10

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