Smooth relaxed Si0.75Ge0.25 layers on Si(001) via in situ rapid thermal annealing

被引：8
作者：
Hong, S
Foo, YL
Bratland, KA
Spila, T
Ohmori, K
Sardela, MR
Greene, JE
Yoon, E
机构：
[1] Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA
[2] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
[3] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 21期
关键词：
D O I：
10.1063/1.1629792
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Atomically flat, fully strained Si1-xGex layers with thicknesses ranging from 8 to 180 nm were grown on Si(001) at 450 degreesC by gas-source molecular beam epitaxy from Ge2H6/Si2H6 mixtures. We show that smooth, relaxed alloy layers are obtained, without the necessity of using several-microns-thick compositionally graded layers, via in situ rapid thermal annealing of fully strained Si1-xGex(001) layers at 1000 degreesC for 10 s. Relaxed Si0.75Ge0.25(001) layers with thicknesses of 100-180 nm were found to have surface widths of similar or equal to5 nm, comparable to the best results obtained using thick graded buffer layers. (C) 2003 American Institute of Physics.
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页码：4321 / 4323
页数：3
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  • [1] New insights into the kinetics of the stress-driven two-dimensional to three-dimensional transition
    Chen, KM
    Jesson, DE
    Pennycook, SJ
    Thundat, T
    Warmack, RJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03): : 2199 - 2202
  • [2] Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
    Currie, MT
    Samavedam, SB
    Langdo, TA
    Leitz, CW
    Fitzgerald, EA
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (14) : 1718 - 1720
  • [3] LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS
    DISMUKES, JP
    PAFF, RJ
    EKSTROM, L
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (10) : 3021 - &
  • [4] TOTALLY RELAXED GEXSI1-X LAYERS WITH LOW THREADING DISLOCATION DENSITIES GROWN ON SI SUBSTRATES
    FITZGERALD, EA
    XIE, YH
    GREEN, ML
    BRASEN, D
    KORTAN, AR
    MICHEL, J
    MII, YJ
    WEIR, BE
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (07) : 811 - 813
  • [5] SURFACE-MORPHOLOGY OF RELATED GEXSI1-X FILMS
    HSU, JWP
    FITZGERALD, EA
    XIE, YH
    SILVERMAN, PJ
    CARDILLO, MJ
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (11) : 1293 - 1295
  • [6] High-quality strain-relaxed SiGe alloy grown on implanted silicon-on-insulator substrate
    Huang, FY
    Chu, MA
    Tanner, MO
    Wang, KL
    U'Ren, GD
    Goorsky, MS
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (19) : 2680 - 2682
  • [7] MEASUREMENT OF THE ACTIVATION BARRIER TO NUCLEATION OF DISLOCATIONS IN THIN-FILMS
    LEGOUES, FK
    MOONEY, PM
    TERSOFF, J
    [J]. PHYSICAL REVIEW LETTERS, 1993, 71 (03) : 396 - 399
  • [8] B-DOPED SI(001) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 AND B2H6-B INCORPORATION AND ELECTRICAL-PROPERTIES
    LU, Q
    BRAMBLETT, TR
    LEE, NE
    HASAN, MA
    KARASAWA, T
    GREENE, JE
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) : 3067 - 3076
  • [9] Formation of island chains in SiGe/Si heteroepitaxy by elastic anisotropy -: art. no. 245307
    Meixner, M
    Schöll, E
    Schmidbauer, M
    Raidt, H
    Köhler, R
    [J]. PHYSICAL REVIEW B, 2001, 64 (24) : 2453071 - 2453074
  • [10] Strain relaxation and defect formation in heteroepitaxial Si1-xGex films via surface roughening induced by controlled annealing experiments
    Ozkan, CS
    Nix, WD
    Gao, HJ
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (17) : 2247 - 2249
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