Annealing effect on ErBa2Cu3Ox films grown by liquid-phase epitaxy

被引：1
|
作者：
Suzuki, T [1 ]
Kita, R [1 ]
机构：
[1] Shizuoka Univ, Grad Sch Elect Sci & Technol, Hamamatsu, Shizuoka 4328561, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 11A期
关键词：
ErBa2Cu3Ox; liquid-phase epitaxy; film; annealing; crystal growth;
D O I：
10.1143/JJAP.42.L1324
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Annealing characteristics of ErBa2Cu3Ox (ErBCO) films grown by a liquid-phase epitaxy technique using BaZrO3 crucibles were studied. Annealing in a mixed gas of O-2 and N-2 with an oxygen concentration of 1% at 800degreesC after oxygen annealing at 400-500degreesC for 300 h increased the critical temperature (T-c) of the ErBCO films. The ErBCO films also showed the highest T-c (zero) of 94 K by annealing in the mixed gas at 800degreesC for 12 h after oxygen annealing at 500degreesC for 24 h. No change in lattice constants was observed for the ErBCO films after annealing in the mixed gas.
引用
收藏
页码：L1324 / L1326
页数：3
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