An accurate electro-thermal model for merged SiC PiN Schottky diodes

被引：9
作者：
Zubert, M. [1 ]
Starzak, L. [1 ]
Jablonski, G. [1 ]
Napieralska, M. [1 ]
Janicki, M. [1 ]
Pozniak, T. [1 ]
Napieralski, A. [1 ]
机构：
[1] Tech Univ Lodz Ul, Dept Microelect & Comp Sci, PL-90924 Lodz, Poland
来源：
MICROELECTRONICS JOURNAL | 2012年 / 43卷 / 05期
关键词：
SiC; PiN; MPS diode; Electro-thermal model; Boost converter; Step-up converter;
D O I：
10.1016/j.mejo.2012.01.009
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper presents a SiC merged PiN Schottky diode model dedicated to the dynamic as-well-as very accurate static simulation. The model takes into account the temperature dependence of device characteristics and combines in a single model the behaviour typical for bipolar and unipolar devices. The presented electro-thermal simulations of the diode produce accurate results, consistent with the measurements. The dynamic model verification has been also presented on the example of a boost power converter. (c) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：312 / 320
页数：9
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