Single-Shot Measurement of Triplet-Singlet Relaxation in a Si/SiGe Double Quantum Dot

被引：79

作者：

Prance, J. R. ^{[1
]}

Shi, Zhan ^{[1
]}

Simmons, C. B. ^{[1
]}

Savage, D. E. ^{[1
]}

Lagally, M. G. ^{[1
]}

Schreiber, L. R. ^{[2
]}

Vandersypen, L. M. K. ^{[2
]}

Friesen, Mark ^{[1
]}

Joynt, Robert ^{[1
]}

Coppersmith, S. N. ^{[1
]}

Eriksson, M. A. ^{[1
]}

机构：

[1] Univ Wisconsin, Madison, WI 53706 USA

[2] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 108卷 / 04期

基金：

欧洲研究理事会;

关键词：

SPIN BLOCKADE; SILICON;

D O I：

10.1103/PhysRevLett.108.046808

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics of repeated single-shot measurements to extract the lifetimes of multiple states simultaneously. When the magnetic field is zero, we find that all three triplet states have equal lifetimes, as expected, and this time is similar to 10 ms. When the field is nonzero, the T-0 lifetime is unchanged, whereas the T_ lifetime increases monotonically with the field, reaching 3 sec at 1 T.

引用

页数：4

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