Broadband on-chip contact pad to microstrip transition with low loss in SiGe BiCMOS technology

被引：0

作者：

von Vangerow, C. ^{[1
]}

Goettel, B. ^{[1
]}

Mueller, D. ^{[1
]}

Zwick, T. ^{[1
]}

机构：

[1] Karlsruhe Inst Technol, Inst Radio Frequency Engn & Elect, Karlsruhe, Germany

来源：

ELECTRONICS LETTERS | 2018年 / 54卷 / 23期

关键词：

BiCMOS integrated circuits; Ge-Si alloys; microstrip transitions; coplanar waveguides; bipolar MIMIC; field effect MIMIC; semiconductor materials; integrated circuit testing; electrical field; ground pads; substrate shield; lossy silicon substrate; electromagnetic field simulations; high-frequency measurement probe; field distribution; realistic excitation source; fabricated test structure; insertion loss; silicon based technologies; coplanar waveguide structure; broadband properties; BiCMOS technology; broadband compact on-chip contact pad; back-to-back configuration; millimetre-wave applications; microstrip transition; SiGe; Si; DESIGN;

D O I：

10.1049/el.2018.5667

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A broadband, compact on-chip contact pad to microstrip transition for use in silicon (Si) based technologies operating up to 330 GHz has been investigated and fabricated. The pad is designed as a short coplanar waveguide structure to concentrate the electrical field in the narrow gap between signal and ground pads, thus eliminating the need for a substrate shield while preserving low interaction with the lossy silicon substrate. The working principle is confirmed by electromagnetic field simulations using a detailed model of a high-frequency measurement probe, which allows to investigate the field distribution with a realistic excitation source. The fabricated test structure with two transitions in a back-to-back configuration shows excellent broadband properties and insertion loss below 4.2 dB up to 330 GHz, making the proposed structure well suited for millimetre-wave applications.

引用

页码：1338 / 1339

页数：2

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