Passive Q-switching characteristics of Yb3+:Gd3Ga5O12 crystal

被引:31
作者
Zhang, XY [1 ]
Brenier, A
Wang, QP
Wang, ZP
Chang, J
Li, P
Zhang, SJ
Ding, SH
Li, ST
机构
[1] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China
[2] Univ Lyon 1, CNRS, UMR 5620, Lab Physicochim Mat Luminescents, F-69622 Villeurbanne, France
[3] Shandong Univ, Inst Crystal Mat, Jinan 250100, Peoples R China
来源
OPTICS EXPRESS | 2005年 / 13卷 / 19期
关键词
D O I
10.1364/OPEX.13.007708
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The passively Q-switched laser characteristics of a quasi-three-level Yb3+:Gd3Ga5O12 (Yb3+:GGG) crystal with Cr4+:YAG saturable absorbers are studied experimentally and theoretically. The pulse parameters under different experimental conditions are measured. Some characteristics different from those of a four-level system are found. In the theoretical aspect, taking into account the spatial distributions of the pump light and intracavity laser mode, the rate equations describing the single Q-switched pulse characteristics of a quasi-three-level system are obtained. The obtained theoretical results are in fair agreement with the experimental results. Some topics such as the influence of the pumping power, the selection of the pump beam size, the optimal combination of output coupler reflectivity and saturable absorber initial transmission, the influence of the excited absorption of the saturable absorber, are discussed. (c) 2005 Optical Society of America.
引用
收藏
页码:7708 / 7719
页数:12
相关论文
共 23 条
  • [1] OPTIMIZATION OF QUASI-3 LEVEL END-PUMPED Q-SWITCHED LASERS
    BEACH, RJ
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1995, 31 (09) : 1606 - 1613
  • [2] High-average-power 1-μm performance and frequency conversion of a diode-end-pumped Yb:YAG laser
    Bibeau, C
    Beach, RJ
    Mitchell, SC
    Emanuel, MA
    Skidmore, J
    Ebbers, CA
    Sutton, SB
    Jancaitis, KS
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (10) : 2010 - 2019
  • [3] Low-heat high-power scaling using InGaAs-diode-pumped Yb:YAG lasers
    Bruesselbach, HW
    Sumida, DS
    Reeder, RA
    Byren, RW
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (01) : 105 - 116
  • [4] Chénais S, 2004, IEEE J QUANTUM ELECT, V40, P1217, DOI [10.1109/JQE.2004.833198, 10.1109/jqe.2004.833198]
  • [5] Chénais S, 2004, IEEE J QUANTUM ELECT, V40, P1235, DOI [10.1109/JQE.2004.833203, 10.1109/jqe.2004.833203]
  • [6] Diode-pumped Yb:GGG laser:: comparison with Yb:YAG
    Chénais, S
    Druon, F
    Balembois, F
    Georges, P
    Brenier, A
    Boulon, G
    [J]. OPTICAL MATERIALS, 2003, 22 (02) : 99 - 106
  • [7] OPTIMIZATION OF PASSIVELY Q-SWITCHED LASERS
    DEGNAN, JJ
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1995, 31 (11) : 1890 - 1901
  • [8] EVALUATION OF ABSORPTION AND EMISSION PROPERTIES OF YB-3+ DOPED CRYSTALS FOR LASER APPLICATIONS
    DELOACH, LD
    PAYNE, SA
    CHASE, LL
    SMITH, LK
    KWAY, WL
    KRUPKE, WF
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (04) : 1179 - 1191
  • [9] FAN TY, 1987, IEEE J QUANTUM ELECT, V23, P605
  • [10] Passively Q-switched diode-pumped Yb:YAG laser using Cr4+-doped garnets
    Kalisky, Y
    Labbe, C
    Waichman, K
    Kravchik, L
    Rachum, U
    Deng, P
    Xu, J
    Dong, J
    Chen, W
    [J]. OPTICAL MATERIALS, 2002, 19 (04) : 403 - 413