Electrical propel-ties of ZrO2 films on Si1-x-yGexCy epitaxial layers

被引：0

作者：

Chatterjee, S ^{[1
]}

Dalapati, GK ^{[1
]}

Samanta, SK ^{[1
]}

Maiti, CK ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect & ECE, Kharagpur 721302, W Bengal, India

来源：

APPLIED SURFACE SCIENCE | 2004年 / 224卷 / 1-4期

关键词：

dielectric constant; epitaxial layers; electrical properties;

D O I：

10.1016/j.apsusc.2003.08.056

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Deposition and electrical properties of high dielectric constant (high-k) ultrathin ZrO2 films on partially strain-compensated Si1-xGexCy/n-Si substrates are reported. Metal insulator semiconductor (MIS) structures were used for high frequency capacitance-voltage (C-V), current-voltage (I-V), and Fowler-Nordheim (F-N) constant current stressing studies. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：288 / 291

页数：4

共 5 条

[1] Electrical properties of stacked gate dielectric (SiO2/ZrO2) deposited on strained SiGe layers
Chatterjee, S
Samanta, SK
Banerjee, HD
Maiti, CK
[J]. THIN SOLID FILMS, 2002, 422 (1-2) : 33 - 38
[2] Deposition of high-k ZrO2 films on strained SiGe layers using microwave plasma
Chatterjee, S
Samanta, SK
Banerjee, HD
Maiti, CK
[J]. ELECTRONICS LETTERS, 2001, 37 (06) : 390 - 392
[3] BORDER TRAPS - ISSUES FOR MOS RADIATION RESPONSE AND LONG-TERM RELIABILITY
FLEETWOOD, DM
SHANEYFELT, MR
WARREN, WL
SCHWANK, JR
MEISENHEIMER, TL
WINOKUR, PS
[J]. MICROELECTRONICS RELIABILITY, 1995, 35 (03) : 403 - 428
[4] Maiti CK., 2001, STRAINED SILICON HET
[5] Semiconductor Industry Association, 2001, INT TECHN ROADM SEM

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