HgCdTe APD - Focal plane array development at CEA Leti-Minatec

被引：10

作者：

Rothman, Johan ^{[1
]}

Perrais, Gwladys ^{[1
]}

de Borniol, Eric ^{[1
]}

Castelein, Pierre ^{[1
]}

Baier, Nicolas ^{[1
]}

Guellec, Fabrice ^{[1
]}

Tchagaspanian, Michael ^{[1
]}

Ballet, Philippe ^{[1
]}

Mollard, Laurent ^{[1
]}

Gout, Sylvain ^{[1
]}

Perez, Andre ^{[1
]}

Fournier, Maryse ^{[1
]}

Chamonal, Jean-Paul ^{[1
]}

Tribolet, Philippe

Destefanis, Gerard ^{[1
]}

机构：

[1] CEA LETI Minatec, F-38054 Grenoble 9, France

来源：

INFRARED TECHNOLOGY AND APPLICATIONS XXXIV, PTS 1 AND 2 | 2008年 / 6940卷

关键词：

HgCdTe; APD; gain; excess noise factor; response time; MBE; EPL; active imaging; FPA;

D O I：

10.1117/12.780447

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report the latest developments of MW HgCdTe electron initiated avalanche photo-diodes (e-APDs) focal plane arrays (FPAs) at CEA-LETI. The MW e-APD FPAs are developed in view of ultra-sensitive high dynamic range passive starring arrays, active 2D/3D and dual-mode passive-active imaging, which is why both the passive imaging performance and the gain characteristics of the APDs are of interest. A passive mode responsivity operability of 99.9% was measured in LPE and MBE e-APDs FPAs associated with an average NETD=12mK, demonstrating that dual mode passive-active imaging can be achieved with LETI e-APDs without degradation in the passive imaging performance. The gain and sensitivity performances were measured in test arrays and using a low voltage technology (3.3V) CTIA test pixel designed for 3D active imaging. The CTIA and test arrays measurements yielded comparable results in terms of bias gain dependence (M=100 at V(b)=-7V), low excess noise factor (< F >=1.2) and low equivalent input current (I(eq_in)<1pA). These results validated the low voltage CTIA approach for integrating the current from a HgCdTe e-APD under high bias. The test array measurements demonstrated a relative dispersion below 2% in both MBE and LPE e-APDs for gains higher than M>100, associated with an operability of 99%. The operability at I(eq_in)<1pA at M=30 was 95%. A record low value of I(eq_in)=1fA was estimated in the MBE e-APDs at M=100, indicating the potential for using the MW e-APDs for very low flux applications. The high potential of the MW e-APDS for active imaging was demonstrated by impulse response measurements which yielded a typical rise time lower than 100ps and diffusion limited fall time of 900ps to 5ns, depending on the pixel pitch. This potential was confirmed by the demonstration of a 2ns time of flight (TOF) resolution in the CTIA e-APD 3D pixel. The combined photon and dark current induced equivalent back ground noise at f/8 with a cold band pass filter at lambda=1.55 mu m was 2 electrons rms for an integration time of 50ns.

引用

页数：12