Competition of Resistive-Switching Mechanisms in Nickel-Rich Nickel Oxide Thin Films

被引：6

作者：

Yu, Q. ^{[1
]}

Liu, Y. ^{[1
]}

Chen, T. P. ^{[2
]}

Liu, Z. ^{[2
]}

Yu, Y. F. ^{[1
]}

Fung, S. ^{[3
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[3] Univ Hong Kong, Dept Phys, Hong Kong 999077, Hong Kong, Peoples R China

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

NIO FILMS;

D O I：

10.1149/1.3609261

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Resistive-switching behaviors of Ni-rich nickel oxide thin films during the set and reset processes have been examined. In the switching from a low-resistance state (LRS) to a high-resistance state (HRS), a preferable reset voltage is observed. In addition, resistance fluctuations can be also observed in a successful or unsuccessful reset switching. These observations suggest that both the formation and deformation of conductive filaments could be involved and compete in the reset process. On the other hand, the switching from the HRS to the LRS in the set process is easier to occur with a higher pulse voltage, showing that the voltage promotes the formation of the filaments. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3609261] All rights reserved.

引用

页码：H400 / H403

页数：4