Competition of Resistive-Switching Mechanisms in Nickel-Rich Nickel Oxide Thin Films

被引：6
作者：
Yu, Q. [1 ]
Liu, Y. [1 ]
Chen, T. P. [2 ]
Liu, Z. [2 ]
Yu, Y. F. [1 ]
Fung, S. [3 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[3] Univ Hong Kong, Dept Phys, Hong Kong 999077, Hong Kong, Peoples R China
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 10期
基金：
新加坡国家研究基金会;
关键词：
NIO FILMS;
D O I：
10.1149/1.3609261
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Resistive-switching behaviors of Ni-rich nickel oxide thin films during the set and reset processes have been examined. In the switching from a low-resistance state (LRS) to a high-resistance state (HRS), a preferable reset voltage is observed. In addition, resistance fluctuations can be also observed in a successful or unsuccessful reset switching. These observations suggest that both the formation and deformation of conductive filaments could be involved and compete in the reset process. On the other hand, the switching from the HRS to the LRS in the set process is easier to occur with a higher pulse voltage, showing that the voltage promotes the formation of the filaments. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3609261] All rights reserved.
引用
收藏
页码：H400 / H403
页数：4
相关论文
共 12 条
  • [1] Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715
    Choi, BJ
    Jeong, DS
    Kim, SK
    Rohde, C
    Choi, S
    Oh, JH
    Kim, HJ
    Hwang, CS
    Szot, K
    Waser, R
    Reichenberg, B
    Tiedke, S
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)
  • [2] Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99Nb0.01O3
    Fujii, T
    Kawasaki, M
    Sawa, A
    Akoh, H
    Kawazoe, Y
    Tokura, Y
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (01) : 012107 - 1
  • [3] Electrical observations of filamentary conductions for the resistive memory switching in NiO films
    Kim, D. C.
    Seo, S.
    Ahn, S. E.
    Suh, D. -S.
    Lee, M. J.
    Park, B. -H.
    Yoo, I. K.
    Baek, I. G.
    Kim, H. -J.
    Yim, E. K.
    Lee, J. E.
    Park, S. O.
    Kim, H. S.
    Chung, U-In
    Moon, J. T.
    Ryu, B. I.
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (20)
  • [4] Theoretical current-voltage characteristics of ferroelectric tunnel junctions
    Kohlstedt, H
    Pertsev, NA
    Contreras, JR
    Waser, R
    [J]. PHYSICAL REVIEW B, 2005, 72 (12)
  • [5] Strong electron correlation effects in nonvolatile electronic memory devices -: art. no. 033510
    Rozenberg, MJ
    Inoue, IH
    Sánchez, MJ
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (03) : 1 - 3
  • [6] Nonvolatile memory with multilevel switching: A basic model
    Rozenberg, MJ
    Inoue, IH
    Sánchez, MJ
    [J]. PHYSICAL REVIEW LETTERS, 2004, 92 (17) : 178302 - 1
  • [7] Interface resistance switching at a few nanometer thick perovskite manganite active layers
    Sawa, A.
    Fujii, T.
    Kawasaki, M.
    Tokura, Y.
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (23)
  • [8] Reproducible resistance switching in polycrystalline NiO films
    Seo, S
    Lee, MJ
    Seo, DH
    Jeoung, EJ
    Suh, DS
    Joung, YS
    Yoo, IK
    Hwang, IR
    Kim, SH
    Byun, IS
    Kim, JS
    Choi, JS
    Park, BH
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (23) : 5655 - 5657
  • [9] Low power and high speed switching of Ti-doped NiOReRAM under the unipolar voltage source of less than 3 V
    Tsunoda, K.
    Kinoshita, K.
    Noshiro, H.
    Yamazaki, Y.
    Iizuka, T.
    Ito, Y.
    Takahashi, A.
    Okano, A.
    Sato, Y.
    Fukano, T.
    Aoki, M.
    Sugiyama, Y.
    [J]. 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, : 767 - +
  • [10] Applied physics - Tunneling across a ferroelectric
    Tsymbal, Evgeny Y.
    Kohlstedt, Hermann
    [J]. SCIENCE, 2006, 313 (5784) : 181 - 183
12