Unipolar resistive switching mechanism speculated from irreversible low resistance state of Cu2O films

被引：18

作者：

Hong, Sahwan ^{[2
]}

Long, Deng Xiao ^{[2
]}

Hwang, Inrok ^{[2
]}

Kim, Jin-Soo ^{[2
]}

Park, Yun Chang ^{[3
]}

Kang, Sung-Oong ^{[1
]}

Park, Bae Ho ^{[2
]}

机构：

[1] Gwangju Inst Sci & Technol, Res Inst Solar & Sustainble Energies, Kwangju 500712, South Korea

[2] Konkuk Univ, Div Quantum Phases & Devices, Dept Phys, Seoul 143701, South Korea

[3] Natl Nanofab Ctr, Taejon 305806, South Korea

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 05期

关键词：

D O I：

10.1063/1.3619833

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observed cathode-interfaced electroreduction and a variation of oxygen content in an irreversible low resistance state of highly oriented cuprous oxide (Cu2O) films. These local microstructural and stoichiometric changes in hard breakdown of film allow speculation on the unipolar resistive switching mechanism: formation of metallic filaments originating from generation/migration of oxygen ions (O2-) from the cathode and release of oxygen gas through the anode. Based on the as-proposed switching model, endurance switching properties could be modulated from tens up to over 10(4) switching cycles by controlling ambient gas or the interface between Cu2O and anode. (C) 2011 American Institute of Physics. [doi:10.1063/1.3619833]

引用

页数：3

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