H-Center and V-Center Defects in Hybrid Halide Perovskites

被引:50
作者
Whalley, Lucy D. [1 ,2 ]
Crespo-Otero, Rachel [3 ]
Walsh, Aron [1 ,2 ,4 ]
机构
[1] Imperial Coll London, Thomas Young Ctr, Exhibit Rd, London SW7 2AZ, England
[2] Imperial Coll London, Dept Mat, Exhibit Rd, London SW7 2AZ, England
[3] Queen Mary Univ London, Sch Biol & Chem Sci, London E1 4NS, England
[4] Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South Korea
基金
英国工程与自然科学研究理事会;
关键词
SOLAR-CELLS; MECHANISM; LOSSES; HOLE;
D O I
10.1021/acsenergylett.7b00995
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The self-trapping of holes with the formation of a molecular X-2(-) anion is a well-established process in metal halide (MX) crystals, but V-center (2X(-) + h(+) -> X-2(-)) and H-center (X- + X-i(-) + h(+)-> X-2(-)) defects have not yet been confirmed in halide perovskite semiconductors. The I-2(-) split-interstitial defect is predicted to be a spin radical in CH3NH3PbI3 with an optically excited state in the semiconductor band gap.
引用
收藏
页码:2713 / 2714
页数:2
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