Gated electronic currents modulation and designs of logic gates with single molecular field effect transistors

被引:18
|
作者
Xu, Yuqing [1 ]
Fang, Changfeng [1 ]
Cui, Bin [1 ]
Ji, Guomin [1 ]
Zhai, Yaxin [1 ]
Liu, Desheng [1 ,2 ]
机构
[1] Shandong Univ, Sch Phys & Microelect, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[2] Jining Univ, Dept Phys, Qufu 273155, Peoples R China
关键词
TRANSPORT; SWITCH;
D O I
10.1063/1.3615691
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electronic transport properties of a gated single 1,3-benzenedithiol molecular device are studied by using nonequilibrium Green's function in combination with density functional theory, which is hoped to complement the experiments. The results show that the external transverse gate electrodes can effectively tune the electronic transport properties of the molecular devices. Negative differential resistance behaviors are observed almost at the same source-drain bias when applied different gate voltages. Mechanisms are proposed for these phenomena. Designs of using one gated molecular device to realize five basic logic gates are also put forward. (C) 2011 American Institute of Physics. [doi:10.1063/1.3615691]
引用
收藏
页数:3
相关论文
共 50 条
  • [1] Electric field-effect thermal transistors and logic gates
    Xu, Deyu
    Zhao, Junming
    Liu, Linhua
    INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2024, 227
  • [2] Logic-in-Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double-Gated Feedback Field-Effect Transistors
    Son, Jaemin
    Shin, Yunwoo
    Cho, Kyoungah
    Kim, Sangsig
    ADVANCED ELECTRONIC MATERIALS, 2023, 9 (04)
  • [3] MODULATION-DOPED FIELD-EFFECT TRANSISTORS AND LOGIC GATES BASED ON TWO-DIMENSIONAL HOLE GAS
    KIEHL, RA
    STORMER, HL
    BALDWIN, K
    GOSSARD, AC
    WINGMANN, W
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1968 - 1968
  • [4] MODELLING LOGIC GATES DESIGN USING PYRROLE BASED SINGLE MOLECULAR FIELD EFFECT TRANSISTOR
    Hariharan, R. M.
    Thiruvadigal, D. J.
    DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 2016, 11 (03) : 873 - 882
  • [5] Novel designs of NOR2 and NOR3 logic gates using single electron transistors
    Goel, AK
    Venkataratnam, A
    2004 IEEE International Conference on Semiconductor Electronics, Proceedings, 2004, : 108 - 111
  • [6] Ternary universal logic gates using quantum dot gate field effect transistors
    Karmakar, S.
    Jain, F. C.
    INDIAN JOURNAL OF PHYSICS, 2014, 88 (12) : 1275 - 1283
  • [7] Reconfigurable Field Effect Transistors Design Solutions for Delay-Invariant Logic Gates
    Galderisi, Giulio
    Mikolajick, Thomas
    Trommer, Jens
    IEEE EMBEDDED SYSTEMS LETTERS, 2022, 14 (02) : 107 - 110
  • [8] Ternary universal logic gates using quantum dot gate field effect transistors
    S. Karmakar
    F. C. Jain
    Indian Journal of Physics, 2014, 88 : 1275 - 1283
  • [9] Origins of Leakage Currents on Electrolyte-Gated Graphene Field-Effect Transistors
    Svetlova, Anastasia
    Kireev, Dmitry
    Beltramo, Guillermo
    Mayer, Dirk
    Offenhaeusser, Andreas
    ACS APPLIED ELECTRONIC MATERIALS, 2021, 3 (12) : 5355 - 5364
  • [10] Effects of the Ionic Currents in Electrolyte-gated Organic Field-Effect Transistors
    Said, Elias
    Larsson, Oscar
    Berggren, Magnits
    Crispin, Xavier
    ADVANCED FUNCTIONAL MATERIALS, 2008, 18 (21) : 3529 - 3536