Structural and electrical properties of Ta2O5 thin films prepared by photo-induced CVD

被引：7

作者：

Liu, Jun ^{[1
]}

Wei, Aixiang ^{[1
]}

Zhao, Xianghui ^{[1
]}

Zhang, Haiyan ^{[1
]}

机构：

[1] Guangdong Univ Technol, Fac Mat & Energy, Guangzhou 510006, Guangdong, Peoples R China

来源：

BULLETIN OF MATERIALS SCIENCE | 2011年 / 34卷 / 03期

关键词：

Chemical vapour deposition processes; oxides; dielectric material; MOS capacitor; MORPHOLOGY; SUBSTRATE;

D O I：

10.1007/s12034-011-0106-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tantalum oxide (Ta2O5) films and Al/Ta2O5/Si MOS capacitors were prepared at various powers by ultraviolet photo-inducing hot filament chemical vapour deposition (HFCVD). Effects of ultraviolet light powers on the structure and electrical properties of Ta2O5 thin films were studied using X-ray diffraction (XRD) and atomic force microscopy (AFM). The dielectric constant, leakage current density and breakdown electric field of the samples were studied by the capacitance voltage (C V) and current voltage (I-V) measurements of the Al/Ta2O5/Si MOS capacitors. Results show that the Ta2O5 thin films grown without inducement of UV light belong to amorphous phase, whereas the samples grown with inducement of UV-light belong to delta-Ta2O5 phase. The dielectric constant and leakage current density of the Ta2O5 thin films increase with increasing powers of the UV-lamps. Effects of UV-lamp powers on the structural and electrical properties were discussed.

引用

页码：443 / 446

页数：4

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