Subarray-SHORT De-Embedding for Improving Accuracy of On-Wafer Measurements of Devices for Millimeter and Submillimeter-Wave Applications

A de-embedding technique for high-Q or high-cutoff frequency (f(T)) one-port structures such as metal-oxide-semiconductor (MOS) varactors and Schottky diodes for millimeter- and submillimeter-wave applications is proposed to mitigate the limitation of vector network analyses of structures with a large ratio between the vertical bar reactance vertical bar and resistance (vertical bar X vertical bar/R). A subarray with a fewer number of cells of the device under test that has a lower vertical bar X vertical bar/R is used instead of an ultrahigh-Q OPEN structure for de-embedding. This technique provides more accurate measurements of cutoff frequency (f(T)). The resulting average of %-variations of measured f(T) and series resistance over the measurement frequency range (50-55 GHz) are decreased by 30%-45%. More importantly, the %-variation range of f(T) for the proposed method over samples and frequencies is less than similar to 20% which is similar to 50% smaller than the de-embedding using a conventional ultrahigh-Q OPEN structure.