Formation of CuInSe2 and Cu(In,Ga)Se2 films by electrodeposition and vacuum annealing treatment

被引：54

作者：

Zhang, L ^{[1
]}

Jiang, FD ^{[1
]}

Feng, JY ^{[1
]}

机构：

[1] Tsing Hua Univ, Dept Mat Sci & Engn, Natl Tribiol Lab, Beijing 100084, Peoples R China

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2003年 / 80卷 / 04期

关键词：

CuInSe2; Cu(In; Ga)Se-2; electrodeposition; annealing treatment; thin films;

D O I：

10.1016/j.solmat.2003.06.014

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Polycrystalline thin films of CuInSe2 and Cu(In,Ga)Se-2 (CIGS) were grown on both polished Mo substrates and Mo-coated glass substrates by one-step electrodeposition. All the as-deposited films have been annealed in vacuum at 450degreesC for a short time to improve the crystalline properties. The films have been characterized by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis. The results indicate that the crystallization of the films was greatly improved after annealing. Further more, a CIGS film with 23 at% Ga was obtained. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：483 / 490

页数：8

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