Anisotropic Goos-Hanchen shift in few-layer two-dimensional materials

被引:10
作者
Li, De-Kang [1 ,2 ]
Wang, Su-Yun [1 ,2 ]
Yan, Xiao-Qing [1 ,2 ]
Su, Bao-Wang [1 ,2 ]
Hu, Zhen [1 ,2 ]
Liu, Zhi-Bo [1 ,2 ,3 ,4 ]
Tian, Jian-Guo [1 ,2 ,3 ,4 ]
机构
[1] Nankai Univ, Sch Phys, Minist Educ, Key Lab Weak Light Nonlinear Photon, Tianjin 300071, Peoples R China
[2] Nankai Univ, Teda Appl Phys Inst, Tianjin 300071, Peoples R China
[3] Nankai Univ, Renewable Energy Convers & Storage Ctr, Tianjin 300071, Peoples R China
[4] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China
基金
中国国家自然科学基金; 美国国家科学基金会;
关键词
BLACK PHOSPHORUS; OPTICAL ANISOTROPY; REFLECTION; GRAPHENE; SURFACE;
D O I
10.1063/5.0084163
中图分类号
O59 [应用物理学];
学科分类号
摘要
We study the Goos-Hanchen (GH) effect in mechanically exfoliated anisotropic two-dimensional (2D) black phosphorus and rhenium disulfide by using a beam displacement amplification technique. We observed anisotropic GH shifts along different crystal orientations of two 2D materials, and they exhibit different anisotropy characteristics. It is because the GH shift is mainly affected by the phase shift of light in the 2D materials, which is related to the real part of the refractive index, while the absorption effect related to the imaginary part of the refractive index has negligible influence on the GH shift. The GH shift can be applied to explore the anisotropy of the real part of the refractive index of a 2D material. Our results provide an important way to reveal the anisotropy mechanism of 2D materials.
引用
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页数:6
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