Deposition of carbon-free silicon dioxide from pure hexamethyldisiloxane using an atmospheric microplasma jet

被引：72

作者：

Raballand, V. ^{[1
]}

Benedikt, J. ^{[1
]}

von Keudell, A. ^{[1
]}

机构：

[1] Ruhr Univ Bochum, Fak Phys & Astron, Arbeitsgrp Reakt Plasmen, D-44780 Bochum, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 09期

关键词：

D O I：

10.1063/1.2844880

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon-free silicon dioxide has been deposited at room temperature by injection of pure hexamethyldisiloxane (HMDSO) into an atmospheric pressure microplasma jet from argon. At low HMDSO flow rates [< 0.1 SCCM (SCCM denotes cubic centimeter per minute at STP)], the SiO(x)H(z) films contain no carbon and exhibit an oxygen to silicon ratio close to 2 according to x-ray photoelectron spectroscopy. At high HMDSO flow rates (>0.1 SCCM), SiO(x)C(y)H(z) films with a carbon content of up to 21% are obtained. The transition between organic to inorganic film is confirmed by Fourier transformed infrared spectroscopy. The deposition of inorganic films without oxygen admixture is explained by an ion-induced polymerization scheme of HMDSO. (C) 2008 American Institute of Physics.

引用

页数：3

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